undergraduate thesis
Dynamic characteristics of bipolar junction transistors

Josip Babić (2015)
Metadata
TitleDinamičke karakteristike bipolarnih spojnih tranzistora
AuthorJosip Babić
Mentor(s)Tomislav Matić (thesis advisor)
Abstract
Ovaj završni rad opisuje poluvodičke komponente koje su u današnjoj tehnici nezamjenjive – tranzistore. Bitni parametri za opisivanje rada i odabir pravog tranzistora za specifične situacije su dinamičke karakteristike koje su određene hibridnim, h-parametrima. Rad je podijeljen na dva dijela: teorijski dio i simulaciju odabranih tipova tranzistora.U teorijskom dijelu opisane su metode određivanja dinamičkih parametara.Simulacija je provedena u programu „NI Multisim“ kako bi se odredile strujno-naponske karakteristike iz kojih su grafičkom metodom određeni dinamički parametri za tri primjera bipolarnih spojnih tranzistora.
KeywordsBJT Bipolar Junction Transistor Transistor Characteristics Semiconducting components Hybrid parameters h-parameters
Parallel title (English)Dynamic characteristics of bipolar junction transistors
Committee MembersTomislav Matić (committee member)
Hrvoje Glavaš (committee member)
Mario Vranješ (committee member)
GranterSveučilište Josipa Jurja Strossmayera u Osijeku
Fakultet elektrotehnike, računarstva i informacijskih tehnologija Osijek
Lower level organizational unitsZavod za elektroenergetiku
Katedra za elektrane i energetske procese
PlaceOsijek
StateCroatia
Scientific field, discipline, subdisciplineTECHNICAL SCIENCES
Electrical Engineering
Electronics
Study programme typeuniversity
Study levelundergraduate
Study programmeUndergraduate University Study Programme; branch Electrical Engineering
Academic title abbreviationuniv.bacc.ing.el.
Genreundergraduate thesis
Language Croatian
Defense date2015-09-10
Parallel abstract (English)
This final paper describes semiconducting components which are irreplaceable in todays technologies. Hybrid (h) parameters and dynamic characheristics are fundamental parameters in describing the way those components work and for choosing the right type of transistor in specific situations. This thesis is composed of two parts: a theoretical explanation and a simulation of choosen types of transistors. Theoretical part has an explanation of methods used for determining h-parameters. Simulation is made in program interface called „NI Multisim“ so the I-U characteristics can be drawn. After those characteristics are made, the dynamical parameters for three types of transistors are determined through graphical method.
Parallel keywords (Croatian)bipolarni spojni tranzistori karakteristike tranzistora poluvodičke komponente hibridni parametri h-parametri
Resource typetext
Access conditionOpen access
Terms of usehttp://rightsstatements.org/vocab/InC/1.0/
URN:NBNhttps://urn.nsk.hr/urn:nbn:hr:200:105980
CommitterAnka Ovničević